2N4898X Просмотр технического описания (PDF) - Semelab - > TT Electronics plc

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2N4898X

PNP EPITAXIAL BASE MEDIUM POWER TRANSISTOR

Semelab - > TT Electronics plc  

2N4898X

2N4899X

2N4900X

Electrical Characteristics (TC = 25°C unless otherwise stated.)

Parameter

Test Conditions

ICEO

Collector – Emitter Cut-off Current VCE = –30V

IB = 0

ICEX

Collector – Emitter Cut-off Current VCE = V(BR)CEO

VBE = –1.5V

TC = 150°C

ICBO

Collector – Base Cut-off Current VCB = V(BR)CBO

IE = 0

ICES

Collector – Emitter Leakage

Current

VCE = V(BR)CEO

VBE = 0

VCE(sat)*

Collector – Emitter Saturation

Voltage

IC = –1A

IB = –0.1A

VBE(sat)*

VBE*

hFE*

ft

Base – Emitter Saturation Voltage

Base – Emitter Voltage

DC Current Gain

Transition Frequency

IC = –1A

IC = –1A

VCE = –1V

VCE = –1V

VCE = –1V

VCE = –10V

f = 1 MHz

IB = –0.1A

VCE = –1V

IC = –50mA

IC = –500mA

IC = –1A

IC = –250mA

* Pulse Test: tp = 300µs, δ = 2%.

Min.

Typ.

Max.

0.50

100

1.0

0.1

Units

mA

µA

mA

mA

100 µA

–0.60 V

–1.3V V

–1.3V V

40

20

130 —

10

3.0

MHz

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Prelim. 9/96

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