HN1B04F Просмотр технического описания (PDF) - Toshiba

Номер в каталоге

Компоненты Описание

производитель

HN1B04F

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)

Toshiba 

HN1B04F

Q1 Electrical Characteristics (Ta = 25°C)

Characteristic

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-Emitter Voltage

Transition frequency

Collector output capacitance

Symbol

ICBO

IEBO

hFE(1)

hFE(2)

VCE (sat)

VBE

fT

Cob

Test

Circuit

Test Condition

― VCB = −35V, IE = 0

― VEB = −5V, IC = 0

― VCE = −1V, IC = −100mA

― VCE = −6V, IC = −400mA

― IC = −100mA, IB = −10mA

― VCE = −1V, IC = −100mA

― VCE = −6V, IC = −20mA

― VCB = −6V, IE = 0, f = 1MHz

Min Typ. Max Unit

―

― −100 nA

―

― −100 nA

70

―

400

25

―

―

― −0.1 −0.25 V

― −0.8 −1.0 V

―

200

― MHz

―

7

―

pF

Q2 Electrical Characteristics (Ta = 25°C)

Characteristic

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-Emitter Voltage

Transition frequency

Collector output capacitance

Symbol

ICBO

IEBO

hFE(1)

hFE(2)

VCE (sat)

VBE

fT

Cob

Test

Circuit

Test Condition

― VCB = 35V, IE = 0

― VEB = 5V, IC = 0

― VCE = 1V, IC = 100mA

― VCE = 6V, IC = 400mA

― IC = 100mA, IB = 10mA

― VCE = 1V, IC = 100mA

― VCE = 6V, IC = 20mA

― VCB = 6V, IE = 0, f = 1MHz

Min Typ. Max Unit

―

―

100 nA

―

―

100 nA

70

―

400

25

―

―

―

0.1 0.25 V

―

0.8

1.0

V

―

300

― MHz

―

7

―

pF

Marking

Equivalent Circuit (Top View)

6

54

50

Q2

Q1

123

2

2014-03-01

Share Link: