F1S40N10 Просмотр технического описания (PDF) - Fairchild Semiconductor

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F1S40N10

40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs

Fairchild Semiconductor 

RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM

Test Circuits and Waveforms

VDS

L

VARY tP TO OBTAIN

REQUIRED PEAK IAS

RG

VGS

DUT

+

VDD

-

tP

0V

IAS

0

0.01Ω

tP

IAS

BVDSS

VDS

VDD

tAV

FIGURE 12. UNCLAMPED ENERGY TEST CIRCUIT

FIGURE 13. UNCLAMPED ENERGY WAVEFORMS

RGS

RL

DUT

+

VDD

-

VGS

FIGURE 14. SWITCHING TIME TEST CIRCUIT

VDS

RL

VGS

Ig(REF)

DUT

+

VDD

-

FIGURE 16. GATE CHARGE TEST CIRCUIT

VDS

tON

td(ON)

tr

90%

tOFF

td(OFF)

tf

90%

10%

0

VGS

10%

0

50%

PULSE WIDTH

10%

90%

50%

FIGURE 15. RESISTIVE SWITCHING WAVEFORMS

VDD

VDS

Qg(TOT)

VGS

VGS = 2V

0

Qg(10)

Qg(TH)

VGS = 10V

VGS = 20V

Ig(REF)

0

FIGURE 17. GATE CHARGE WAVEFORMS

©2002 Fairchild Semiconductor Corporation

RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Rev. C

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