HMC327MS8G Просмотр технического описания (PDF) - Hittite Microwave
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HMC327MS8G Datasheet PDF : 6 Pages
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v05.0509
HMC327MS8G / 327MS8GE
GaAs InGaP HBT MMIC
1/2 WATT POWER AMPLIFIER, 3 - 4 GHz
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
11
Power Control Pin. For proper control bias, this pin should be con-
1
Vpd
nected to 5V through a series resistor of 130 Ohms. A higher voltage is
not recommended. For lower idle current, this voltage can be reduced.
2, 4, 7
3
5, 6
GND
RFIN
RFOUT
Ground: Backside of package has exposed metal ground paddle that
must be connected to ground thru a short path. Vias under the device
are required.
This pin is AC coupled
and matched to 50 Ohms.
RF output and bias for the output stage. The power supply for the
output device needs to be supplied to these pins.
Power supply voltage for the first amplifier stage. An external bypass
8
Vcc
capacitor of 330 pF is required. This capacitor should be placed as
close to the device as possible.
Application Circuit
11 - 6
TL1
TL2
TL3
Impedance 50 Ohm
50 Ohm
50 Ohm
Length
0.038”
0.231”
0.1”
Note: C3 should be located <0.020” from Pin 8 (Vcc)
Note: C2 Should be located < 0.020” from L1
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20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
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