HMC327MS8G Просмотр технического описания (PDF) - Hittite Microwave

Номер в каталоге

Компоненты Описание

производитель

HMC327MS8G

GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz

Hittite Microwave 

v05.0509

HMC327MS8G / 327MS8GE

GaAs InGaP HBT MMIC

1/2 WATT POWER AMPLIFIER, 3 - 4 GHz

Gain, Power & Quiescent Supply

Current vs. Vpd @ 3.5 GHz

30

250

25

200

20

15

10

5

2.5

Icq

3

3.5

4

Vctl (V)

P1dB

Psat

Gain

4.5

150

100

50

0

5

Outline Drawing

Absolute Maximum Ratings

Collector Bias Voltage (Vcc)

Control Voltage (Vpd)

RF Input Power (RFIN)(Vs = Vctl = +5V)

Junction Temperature

Continuous Pdiss (T = 85 °C)

(derate 29 mW/°C above 85 °C)

Thermal Resistance

(junction to ground paddle)

Storage Temperature

Operating Temperature

+5.5V

+5.5V

+16 dBm

150 °C

1.88 W

34 °C/W

-65 to +150 °C

-40 to +85 °C

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

11

NOTES:

1. LEADFRAME MATERIAL: COPPER ALLOY

2. DIMENSIONS ARE IN INCHES [MILLIMETERS]

3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.

4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.

5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO

PCB RF GROUND.

Package Information

Part Number

Package Body Material

HMC327MS8G

Low Stress Injection Molded Plastic

Lead Finish

Sn/Pb Solder

HMC327MS8GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn

[1] Max peak reflow temperature of 235 °C

[2] Max peak reflow temperature of 260 °C

[3] 4-Digit lot number XXXX

MSL Rating

MSL1 [1]

MSL1 [2]

Package Marking [3]

H327

XXXX

H327

XXXX

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

11 - 5

Share Link: