HMC327MS8G(V02) Просмотр технического описания (PDF) - Hittite Microwave

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производитель

HMC327MS8G
(Rev.:V02)

GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz

Hittite Microwave 

v02.1202

MICROWAVE CORPORATION

HMC327MS8G

GaAs InGaP HBT MMIC

POWER AMPLIFIER, 3.0 - 4.0 GHz

Gain, Power & Quiescent Supply

Current vs. Vpd @ 3.5 GHz

30

250

25

200

20

150

15

100

P1dB

Psat

10

Gain

50

Icq

5

0

2.5

3

3.5

4

4.5

5

Vpd (Vdc)

Absolute Maximum Ratings

Collector Bias Voltage (Vcc)

+5.5 Vdc

Control Voltage (Vpd)

+5.5 Vdc

RF Input Power (RFin)(Vs = Vctl = +5.0 Vdc) +20 dBm

Junction Temperature

150 °C

Continuous Pdiss (T = 85 °C)

(derate 29 mW/°C above 85 °C)

1.88 W

Thermal Resistance

(junction to ground paddle)

34 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-40 to +85 °C

8

Outline Drawing

NOTES:

1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED

PLASTIC SILICA AND SILICON IMPREGNATED.

2. LEADFRAME MATERIAL: COPPER ALLOY

3. LEADFRAME PLATING: Sn/Pb SOLDER

4. DIMENSIONS ARE IN INCHES [MILLIMETERS].

5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.

6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.

7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED

TO PCB RF GROUND.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

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