v03.0410
1
On-Wafer P1dB vs. Frequency
Outline Drawing
HMC-ALH445
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 18 - 40 GHz
Absolute Maximum Ratings
Drain Bias Voltage
Drain Bias Current
RF Input Power
Thermal Resistance
(channel to die bottom)
Channel Temperature
Storage Temperature
Operating Temperature
+5.5 Vdc
60 mA
10 dBm
201.2 °C/W
180 °C
-65 to +150 °C
-55 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
1 - 194
Die Packaging Information [1]
Standard
Alternate
GP-1 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com