HMC-ALH382 Просмотр технического описания (PDF) - Hittite Microwave

Номер в каталоге

Компоненты Описание

производитель

HMC-ALH382

GaAs HEMT LOW NOISE AMPLIFIER, 57 - 65 GHz

Hittite Microwave 

v03.1210

1

Wideband Linear Gain

HMC-ALH382

GaAs HEMT LOW NOISE

AMPLIFIER, 57 - 65 GHz

Wideband Input Return Loss

Wideband Output Return Loss

Absolute Maximum Ratings

Drain Bias Voltage

Gate Bias Voltage

Channel Temperature

Thermal Resistance

(channel to die bottom)

Continuous Pdiss (T= 85 °C)

(derate 9.2 mW/°C above 85 °C)

RF Input Power

Storage Temperature

Operating Temperature

+5.5 Vdc

-1 to +0.3 Vdc

180 °C

108.4 °C/W

0.87W

-5 dBm

-65 to +150 °C

-55 to +85 °C

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

1-3

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824

Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

Share Link: