HLB124 Просмотр технического описания (PDF) - Unisonic Technologies
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HLB124 Datasheet PDF : 3 Pages
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UTC HLB124 NPN EPITAXIAL SILICON TRANSISTOR
RANK
Range
B1
10 ~ 17
B2
13 ~ 22
B3
18 ~ 27
B4
23 ~ 32
B5
28 ~ 37
B6
33 ~ 40
CHARACTERISTICS CURVE
Current Gain & Collector Current
100
125℃
75℃
25℃
10
hFE @ VCE = 5V
1
1
10
100
1000
10000
Collector Current, I C (mA)
10000
Saturation Voltage & Collector Current
1000
25℃
75℃
100
1
125℃
VBE(sat) @ IC = 10IB
10
100
1000
Collector Current, IC (mA)
10000
Capacitance & Reverse-Biased Voltage
100
Saturation Voltage & Collector Current
100000
10000
100
0
100
10
1
1000
75℃
125℃
25℃
VCE(sat) @ IC = 10IB
10
100
1000
Collector Current, I C (mA)
10000
On Voltage & Collector Current
VCE = 5V
100
1
10
100
1000
Collector Current (mA)
10000
Swithing Time & Collector Current
10
VCC = 100V, IC = 5IB1 = 5IB2
10
Cob
1
1
10
100
Reverse Biased Voltage (V)
1
0.1
0.1
Ton
TSTG
Tf
1
10
Collector Current (A)
UTC UNISONIC TECHNOLOGIES CO., LTD.
www.unisonic.com.tw
2
QW-R203-029,A
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