HIP5010IS1 Просмотр технического описания (PDF) - Intersil
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HIP5010IS1 Datasheet PDF : 6 Pages
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HIP5010, HIP5011
Absolute Maximum Ratings
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +16V
Input Voltage
IPHASE, IVIN,
VIN . . . . . .
IGND (TJ =
.....
25oC)
.
.
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.
.
.
.
.
....
17A
.........
(Repetitive
. +7V
Peak)
IPHASE, IVIN, IGND (TJ = 150oC) . . . . . . . . . . 15A (Repetitive Peak)
PWM Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -4V to +16V
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 3 (4kV)
Lead Temperature (Soldering 10s) (Lead Tips Only). . . . . . . 300oC
Storage Temperature Range . . . . . . . . . . . . . . . . . . -65oC to 150oC
Junction Temperature Range . . . . . . . . . . . . . . . . . . -40oC to 150oC
Operating Conditions
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . +12V, 20%
Input Voltage VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to 5.5V
Supply Voltage, VCC, minimum for charge-pumped start-up . +4.0V
Thermal Information (Typical)
Package
θJC ††
(oC/W) 0
θJA (oC/W)†
1
2
3
3†††
SOIC (IB) . . . 26
63
45
42
41
35
SIP (IS). . . . . 2
55
30
25
24
18
SIP (IS1). . . . 2
-
-
-
-
-
† Versus additional square inches of 1 ounce copper on the
printed circuit board.
†† θJC is measured to pin 12 for the SOIC. Printed circuit board
had 1 square inch of copper. For SIP Packages value shown is
typical with an infinite heat sink.
††† 200 linear feet per minute of air flow.
IPHASE.SIPs:11.5A(RMS), 11.2A(DC); SOIC:7.4A(RMS), 7.4A(DC)
IVIN . . . SIPs:10.0A(RMS), 8.5A(DC); SOIC:6.4A(RMS), 6.4A(DC)
IGND. . . . .SIPs:8.5A(RMS), 6.0A(DC); SOIC:5.4A(RMS), 5.4A(DC)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the recommended operating conditions of this specification is not implied.
Electrical Specifications
PARAMETERS
rDS(ON) Upper MOSFET
rDS(ON) Lower MOSFET
VIN Operating Current
VIN Quiescent Current
VCC Operating Current
VCC Quiescent Current (HIP5010)
VCC Quiescent Current (HIP5010)
VCC Quiescent Current (HIP5011)
VCC Quiescent Current (HIP5011)
Low Level PWM Input Voltage
High Level PWM Input Voltage
PWM Input Voltage Hysteresis
Input Pulldown Resistance (HIP5010)
Input Pullup Resistance (HIP5011)
SYMBOL
TEST CONDITIONS
RDSU
RDSL
IVINO
IVIN
ICCO
ICCIH
ICCIL
ICCNIH
ICCNIL
VIL
VIH
VIHYS
RPWM
RPWM
VCC = 12V, VIN = 5V
VCC = 12V, VIN = 5V
VIN = 5V, No Load, 500kHz
PWM or PWM = VCC or GND
VCC = 12V, 500kHz
PWM = VCC
PWM = GND
PWM = VCC
PWM = GND
Switching Specifications
PARAMETERS
Upper Device Turn-Off Delay
Lower Device Turn-Off Delay
Dead Time
Phase Rise-Time
Phase Fall-Time
SYMBOL
TEST CONDITIONS
tPHL
tPLH
tDT
tr
tf
VCC = 12V, IPHASE = -1A
VCC = 12V, IPHASE = +1A
VCC = +12V, IPHASE = -1A
VCC = 12V, IPHASE = -1A
VCC = 12V, IPHASE = +1A
TJ = 25oC
MIN TYP MAX
-
34 39
-
36 42
-
5
8
-
0.1 10
-
8
12
-
80
-
-
0.1 10
-
0.1 10
- 140 -
-
1.8
-
-
2.1
-
-
0.3
-
- 220 -
- 220 -
TJ
TJ
=
=
- 40oC
150oC
MIN MAX UNITS
-
65 mΩ
-
68 mΩ
-
10 mA
-
100 µA
-
15 mA
-
400 µA
-
100 µA
-
100 µA
-
400 µA
1
-
V
-
3
V
-
-
V
100 400 kΩ
100 400 kΩ
TJ = 25oC
MIN TYP MAX
-
30 50
-
30 50
-
10
-
-
20
-
-
20
-
TJ
TJ
=
=
- 40oC
150oC
MIN MAX UNITS
-
80
ns
-
80
ns
-
-
ns
-
-
ns
-
-
ns
2-5
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