HGT1S3N60C3DS Просмотр технического описания (PDF) - Harris Semiconductor

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HGT1S3N60C3DS

6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Harris Semiconductor 

HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS

Handling Precautions for IGBTs

Insulated Gate Bipolar Transistors are susceptible to gate-

insulation damage by the electrostatic discharge of energy

through the devices. When handling these devices, care

should be exercised to assure that the static charge built in

the handler’s body capacitance is not discharged through

the device. With proper handling and application procedures,

however, IGBTs are currently being extensively used in pro-

duction by numerous equipment manufacturers in military,

industrial and consumer applications, with virtually no dam-

age problems due to electrostatic discharge. IGBTs can be

handled safely if the following basic precautions are taken:

1. Prior to assembly into a circuit, all leads should be kept

shorted together either by the use of metal shorting

springs or by the insertion into conductive material such

as †ECCOSORBD LD26™ or equivalent.

2. When devices are removed by hand from their carriers,

the hand being used should be grounded by any suitable

means - for example, with a metallic wristband.

† Trademark Emerson and Cumming, Inc.

3. Tips of soldering irons should be grounded.

4. Devices should never be inserted into or removed from

circuits with power on.

5. Gate Voltage Rating - Never exceed the gate-voltage rat-

ing of VGEM. Exceeding the rated VGE can result in

permanent damage to the oxide layer in the gate region.

6. Gate Termination - The gates of these devices are essen-

tially capacitors. Circuits that leave the gate open-circuited

or floating should be avoided. These conditions can result

in turn-on of the device due to voltage buildup on the input

capacitor due to leakage currents or pickup.

7. Gate Protection - These devices do not have an internal

monolithic zener diode from gate to emitter. If gate pro-

tection is required an external zener is recommended.

7

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