HGT1S3N60C3DS Просмотр технического описания (PDF) - Harris Semiconductor
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HGT1S3N60C3DS
Harris Semiconductor
HGT1S3N60C3DS Datasheet PDF : 11 Pages
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HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
Typical Performance Curves (Continued)
200
TJ = +150oC, TC = +75oC
RG = 82Ω, L = 1mH
100
fMAX1 = 0.05/(tD(OFF)I + tD(ON)I)
fMAX2 = (PD - PC)/(EON + EOFF)
PD = ALLOWABLE DISSIPATION
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RθJC = 3.75oC/W
10
1
2
3
VGE = 15V
VGE = 10V
4
56
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
20 TJ = +150oC, VGE = 15V, RG = 82Ω, L = 1mH
18
16
14
12
10
8
6
4
2
0
0
100
200
300
400
500
600
VCE(PK), COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA
500
FREQUENCY = 1MHz
400
CIES
300
200
100
0
0
COES
CRES
5
10
15
20
25
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
600
15
480
12
360
9
VCE = 600V
VCE = 400V
240
VCE = 200V
6
IG REF = 1.060mA
120
RL = 200Ω
3
TC = +25oC
0
0
0
2
4
6
8
10
12
14
QG, GATE CHARGE (nC)
FIGURE 16. GATE CHARGE WAVEFORMS
100
0.5
0.2
10-1 0.1
0.05
0.02
0.01
SINGLE PULSE
10-2
10-5
10-4
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-3
10-2
10-1
100
101
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
5
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