HGT1S12N60A4S9A Просмотр технического описания (PDF) - Fairchild Semiconductor
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HGT1S12N60A4S9A Datasheet PDF : 8 Pages
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HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A
Typical Performance Curves Unless Otherwise Specified (Continued)
24
DUTY CYCLE < 0.5%, VGE = 12V
PULSE DURATION = 250µs
20
16
TJ = 150oC
12
TJ = 125oC
8
TJ = 25oC
4
0
0
0.5
1.0
1.5
2
2.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
24
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs
20
16
TJ = 150oC
12
TJ = 125oC
8
TJ = 25oC
4
0
0
0.5
1.0
1.5
2
2.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
700
RG = 10Ω, L = 500µH, VCE = 390V
600
500
TJ = 125oC, VGE = 12V, VGE = 15V
400
300
200
100
TJ = 25oC, VGE = 12V, VGE = 15V
0
2 4 6 8 10 12 14 16 18 20 22 24
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
400
RG = 10Ω, L = 500µH, VCE = 390V
350
300
250
TJ = 125oC, VGE = 12V OR 15V
200
150
100
50
TJ = 25oC, VGE = 12V OR 15V
0
2 4 6 8 10 12 14 16 18 20 22 24
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 8. TURN-OFF ENERGY LOSS vs
COLLECTOR TO EMITTER CURRENT
18
RG = 10Ω, L = 500µH, VCE = 390V
17
16
15
TJ = 25oC, TJ = 125oC, VGE = 12V
14
13
12
TJ = 25oC, TJ = 125oC, VGE = 15V
11
10
2 4 6 8 10 12 14 16 18 20 22 24
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
32
RG = 10Ω, L = 500µH, VCE = 390V
28
24
TJ = 125oC, OR TJ = 25oC, VGE = 12V
20
16
12
8
TJ = 25oC OR TJ = 125oC, VGE = 15V
4
0
2 4 6 8 10 12 14 16 18 20 22 24
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
©2003 Fairchild Semiconductor Corporation
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
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