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G7N60C Просмотр технического описания (PDF) - Harris Semiconductor

Номер в каталоге
Компоненты Описание
производитель
G7N60C
Harris
Harris Semiconductor Harris
G7N60C Datasheet PDF : 6 Pages
1 2 3 4 5 6
HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3
Typical Performance Curves
40
DUTY CYCLE <0.5%, VCE = 10V
35 PULSE DURATION = 250µs
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = 25oC
40
VGE = 15.0V
12.0V
35
30
30
10.0V
25
TC = 150oC
20
TC = 25oC
15
TC = -40oC
10
25
20
9.0V
15
8.5V
10
8.0V
5
5
7.5V
0
0
7.0V
4
6
8
10
12
14
0
2
4
6
8
10
VGE, GATE-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
40 PULSE DURATION = 250µs
35 DUTY CYCLE <0.5%, VGE = 10V
30
25
TC = -40oC
20
15
10
5
0
0
TC = 150oC
TC = 25oC
1
2
3
4
5
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 3. COLLECTOR-EMITTER ON - STATE VOLTAGE
40 PULSE DURATION = 250µs
35 DUTY CYCLE <0.5%, VGE = 15V
TC = -40oC
30
TC = 25oC
25
20
TC = 150oC
15
10
5
0
0
1
2
3
4
5
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 4. COLLECTOR-EMITTER ON - STATE VOLTAGE
15
VGE = 15V
12
9
6
3
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT AS A
FUNCTION OF CASE TEMPERATURE
12 VCE = 360V, RGE = 50, TJ = 125oC
10
8
140
120
ISC
100
6
80
4
60
tSC
2
40
10
11
12
13
14
15
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
3-18

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