HE8050-C-AB3-B Просмотр технического описания (PDF) - Unisonic Technologies
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HE8050-C-AB3-B Datasheet PDF : 4 Pages
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HE8050
TYPICAL CHARACTERISTICS
Static Characteristics
0.5
IB=3.0mA
IB=2.5mA
0.4
IB=2.0mA
0.3
IB=1.5mA
0.2
IB=1.0mA
0.1
IB=0.5mA
0
0
0.4
0.8
1.2
1.6
2.0
Collector-Emitter Voltage ( V)
Base-Emitter on Voltage
103
VCE=1V
102
101
100
0.2
0.4
0.6
0.8
1.0
1.2
Base-Emitter Voltage (V)
Current Gain-Bandwidth
Product
103
VCE=10V
102
101
100
100
101
102
103
Collector Current, Ic (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
NPN SILICON TRANSISTOR
DC Current Gain
103
VCE=1V
102
101
100
10-1
100
101
102
103
Collector Current, Ic (mA)
Saturation Voltage
4
10
Ic=10*IB
VBE(SAT)
3
10
2
10
VCE(SAT)
101
10-1
100
101
102
103
Collector Current, Ic (mA)
Collector Output Capacitance
103
f=1MHz
102
IE=0
101
100
100
101
102
103
Collector-Base Voltage (V)
3 of 4
QW-R211-018,C
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