H8/3068F Просмотр технического описания (PDF) - Renesas Electronics
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H8/3068F Datasheet PDF : 935 Pages
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Main Revisions for this Edition
Item
Page Revision (See Manual for Details)
All
All references to Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and
other Hitachi brand names changed to Renesas Technology Corp.
Designation for categories changed from “series” to “group”
19.2.1 Connecting 651
a Crystal Resonator
Table 19.1 (1)
Damping Resistance
Value
Note amended
Note: A crystal resonator between 2 MHz and 25 MHz can be
used. If the chip is to be operated at less than 2 MHz, the
on-chip frequency divider should be used. (A crystal
resonator of less than 2 MHz cannot be used.)
Section 21
Electrical
Characteristics
675 to “Preliminary” deleted
706
21.1.2 DC
Characteristics
Table 21.2 DC
Characteristics (1)
677, 678 Table and note amended
Item
Current
Normal
dissipation*2 operation
Symbol Min
ICC*4
—
Sleep mode
—
Module
—
standby mode
Standby
—
mode*3
—
Flash memory
—
programming/
erasing*5
Typ Max
32
47
(5.0 V)
37
58
(5.0 V)
24
38
(5.0 V)
29
47
(5.0 V)
19
31
(5.0 V)
21
37
(5.0 V)
1.0 10
—
80
37
57
42
68
Test
Unit Conditions
mA f = 20 MHz
f = 25 MHz
mA f = 20 MHz
f = 25 MHz
mA f = 20 MHz
f = 25 MHz
µA Ta 50˚C
µA 50˚C Ta
mA f = 20 MHz
f = 25 MHz
Notes: 3. The values are for VRAM ≤ VCC < 4.5 V, VIH min = VCC ×
0.9, and VIL max = 0.3 V.
4. ICC max. (normal operation)
= 3.0 (mA) + 0.40 (mA/(MHz × V)) × VCC × f
ICC max. (sleep mode)
= 3.0 (mA) + 0.32 (mA/(MHz × V)) × VCC × f
ICC max. (sleep mode + module standby mode)
= 3.0 (mA) + 0.25 (mA/(MHz × V)) × VCC × f
The Typ values for power consumption are reference
values.
5. Sum of current dissipation in normal operation and
current dissipation in program/erase operations.
Rev. 3.00 Sep 14, 2005 page v of xxii
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