3N165-66 Просмотр технического описания (PDF) - Calogic, LLC

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3N165-66

Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier

Calogic, LLC 

CORPORATION

3N165 / 3N166

ELECTRICAL CHARACTERISTICS (Continued) (TA = 25oC and VBS = 0 unless otherwise specified)

SYMBOL

PARAMETER

MIN

MAX UNITS

TEST CONDITIONS

gfs

Forward Transconductance

gos

Output Admittance

1500

3000

300

µS VDS = -15V, ID = -10mA, f = 1kHz

Ciss

Input Capacitance

Crss

Reverse Transfer Capacitance

3.0

0.7

pF VDS = -15V, ID = -10mA, f = 1MHz (Note 4)

Coss

Output Capacitance

3.0

RE(Yfs)

Common Source Forward Transconductance 1200

µs

VDS = -15V, ID = -10mA, f = 100MHz (Note 4)

MATCHING CHARACTERISTICS 3N165

SYMBOL

Yfs1 / Yfs2

VGS1-2

∆VGS1−2

∆T

PARAMETER

Forward Transconductance Ratio

Gate Source Threshold Voltage Differential

Gate Source Threshold Voltage Differential

Change with Temperature

MIN

0.90

MAX

1.0

100

100

UNITS

mV

µV/ oC

NOTES: 1. See handling precautions on 3N170 data sheet.

2. Per transistor.

3. Devices must not be tested at ±125V more than once, nor longer than 300ms.

4. For design reference only, not 100% tested.

TEST CONDITIONS

VDS = -15V, ID = -500µA, f = 1kHz

VDS = -15V, ID = -500µA

VDS = -15V, IA = -500µA

TA = -55oC to +25oC

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