31DQ04 Просмотр технического описания (PDF) - Nihon Inter Electronics

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производитель

31DQ04

Schottky Barrier Diode

Nihon Inter Electronics 

SBD Type : 31DQ04

FEATURES

* Low Forward Voltage Drop

* Low Power Loss, High Efficiency

* High Surge Capability

* 30volts trough 100volts Types Available

OUTLINE DRAWING

Maximum Ratings

Approx Net Weight:1.18g

Rating

Symbol

31DQ04

Unit

Repetitive Peak Reverse Voltage

Non-repetitive Peak Reverse Voltage

Average Rectified

Output Current

Without Fin or

P.C.Board

With Fin *1

RMS Forward Current

Surge Forward Current

Operating JunctionTemperature Range

Storage Temperature Range

VRRM

VRSM

IO

IF(RMS)

IFSM

Tjw

Tstg

40

V

45

V

1.7 Ta=32°C Half Sine Wave Resistive Load A

3.0 Ta=53°C

4.71

A

120 Half Sine Wave,1cycle,Non-repetitive

A

- 40 to + 150

°C

- 40 to + 150

°C

Electrical • Thermal Characteristics

Characteristics

Symbol

Conditions

Peak Reverse Current

IRM Tj= 25°C, VRM= VRRM

Peak Forward Voltage

VFM Tj= 25°C, IFM= 3 A

Thermal Resistance(Junction to Ambient)

Rth(j-a)

Without Fin

With Fin *1

or

P.C.Board

*1 :20x20x1t(mm) Copper plates, L=5mm, Both Sides

Min Typ

--

--

--

Max

3

0.55

80

34

Unit

mA

V

°C/W

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