HBTGFR421-W Просмотр технического описания (PDF) - SEOUL SEMICONDUCTOR

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Компоненты Описание

производитель

HBTGFR421-W

3- chip Full- color LED

SEOUL SEMICONDUCTOR 

2. Absolute maximum ratings

(Ta=25℃)

Parameter

Symbol

Red

Value

Green

Blue

Power Dissipation

Pd

69

66

66

Forward Current

IF

30

20

20

Peak Forward Current

IFM *1

100

50

50

Operating Temperature

Topr.

-40 ~ 85

Storage Temperature

Tstg.

-40 ~ 100

*1 IFM conditions: Pulse width Tw≤ 1msec and Duty ratio≤1/10.

Unit

mW

mA

mA

℃

℃

3. Electro-Optical Characteristics

Parameter

Forward

Voltage

Reverse

Current

Luminous

Intensity*2

Wavelength

Spectral

Bandwidth

Viewing

Angle*3

Color

Red

Green

Blue

R/G/B

Red

Green

Blue

Red

Green

Blue

Red

Green

Blue

R,G,B

Symbol Condition

VF

IF=10 ㎃

IR

VR=5V

IV

IF=10 ㎃

λd

IF=20 ㎃

Δλ

2θ1/2

IF=10 ㎃

IF=30 ㎃

(total)

Min

1.7

2.7

2.7

-

50

150

60

615

515

465

-

Typ

2.0

3.1

3.1

-

90

220

90

625

525

472

15

30

20

120

(Ta=25℃)

Max Unit

2.2

3.4

V

3.4

10

㎂

130

300 mcd

120

635

535

nm

478

nm

-

˚

*2 The luminous intensity IV is measured at the peak of the spatial pattern which may not be aligned with the

mechanical axis of the LED package.

*3 θ1/2 is the off-axis where the luminous intensity is 1/2 the peak intensity.

[Note] Tolerance : Iv ± 10%, λD ± 2nm, , VF ± 0.1V

Rev. 02

July 2012

WWW.SEOULSEMICON.COM

서식번호 : SSC-QP-7-07-25 (Rev.0.0)

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