HBNP3946S6R Просмотр технического описания (PDF) - Cystech Electonics Corp.

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HBNP3946S6R

General Purpose NPN / PNP Epitaxial Planar Transistors (dual transistors)

Cystech Electonics Corp. 

CYStech Electronics Corp.

Spec. No. : C902S6R

Issued Date : 2003.03.18

Revised Date :

Page No. : 2/5

Characteristics (Ta=25°C)

• TR1 (NPN)

Symbol

Min.

Typ.

BVCBO

60

-

BVCEO

40

-

BVEBO

6

-

ICBO

-

-

ICEX

-

-

IEBO

-

-

VCE(sat)

-

-

VCE(sat)

-

-

hFE

40

-

hFE

70

-

hFE

100

-

hFE

60

-

*hFE

30

-

fT

300

-

Cob

-

-

Max.

-

-

-

100

50

100

0.2

0.3

-

-

300

-

-

-

4

• TR2 (PNP)

Symbol

Min.

BVCBO

-40

BVCEO

-40

BVEBO

-5

ICBO

-

ICEX

-

IEBO

-

VCE(sat)

-

*VCE(sat)

-

hFE

60

hFE

80

hFE

100

hFE

60

*hFE

30

fT

300

Cob

-

Typ.

Max.

-

-

-

-

-

-

-

-100

-

-50

-

-100

-

-0.25

-

-0.4

-

-

-

-

300

-

-

-

-

-

-

-

4.5

Unit

V

V

V

nA

nA

nA

V

V

-

-

-

-

-

MHz

pF

Test Conditions

IC=10uA

IC=1mA

IE=10uA

VCB=50V

VCE=30V,VEB=3V

VEB=5V

IC=10mA, IB=1mA

IC=50mA, IB=5mA

VCE=1V, IC=100uA

VCE=1V, IC=1mA

VCE=1V, IC=10mA

VCE=1V, IC=50mA

VCE=1V, IC=100mA

VCE=20V, IC=10mA, f=100MHz

VCB=5V, f=1MHz

*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%

Unit

V

V

V

nA

nA

nA

V

V

-

-

-

-

-

MHz

pF

Test Conditions

IC=-10uA

IC=-1mA

IE=-10uA

VCB=-30V

VCE=-30V,VEB=-3V

VEB=-4V

IC=-10mA, IB=-1mA

IC=-50mA, IB=-5mA

VCE=-1V, IC=-100uA

VCE=-1V, IC=-1mA

VCE=-1V, IC=-10mA

VCE=-1V, IC=-50mA

VCE=-1V, IC=-100mA

VCE=-20V, IC=-10mA, f=100MHz

VCB=-5V, f=1MHz

*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%

HBNP3946S6R

CYStek Product Specification

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