HAF2014 Просмотр технического описания (PDF) - Renesas Electronics

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производитель

HAF2014

Silicon N Channel MOS FET Series Power Switching

Renesas Electronics 

HAF2014

Absolute Maximum Ratings

Item

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain current

Channel dissipation

Channel temperature

Storage temperature

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Ta = 25°C

Symbol

VDSS

VGSS

VGSS

ID

ID (pulse) Note 1

IDR

Pch Note 2

Tch

Tstg

Value

60

16

–2.5

40

80

40

50

150

–55 to +150

(Ta = 25°C)

Unit

V

V

V

A

A

A

W

°C

°C

Typical Operation Characteristics

Item

Input voltage

Input current

(Gate non shut down)

Input current

(Gate shut down)

Shut down temperature

Gate operation voltage

Symbol

VIH

VIL

IIH1

IIH2

IIL

IIH (sd) 1

IIH (sd) 2

Tsd

VOP

Min

Typ

Max

Unit

Test Conditions

3.5

—

—

V

—

—

1.2

V

—

—

100

µA Vi = 8 V, VDS = 0

—

—

50

µA Vi = 3.5 V, VDS = 0

—

—

1

µA Vi = 1.2 V, VDS = 0

—

0.8

—

mA Vi = 8 V, VDS = 0

—

0.35

—

—

175

—

mA Vi = 3.5 V, VDS = 0

°C Channel temperature

3.5

—

12

V

Rev.3.00 Apr 27, 2006 page 2 of 7

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