HAF2002 Просмотр технического описания (PDF) - Renesas Electronics

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HAF2002

Silicon N Channel MOS FET Series Power Switching

Renesas Electronics 

HAF2002

Silicon N Channel MOS FET Series

Power Switching

REJ03G1135-0300

(Previous: ADE-208-503A)

Rev.3.00

Sep 07, 2005

Description

This FET has the over temperature shut-down capability sensing to the junction temperature.

This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down

the gate voltage in case of high junction temperature like applying over power consumption, over current etc.

Features

• Logic level operation (4 to 6 V Gate drive)

• High endurance capability against to the short circuit

• Built-in the over temperature shut-down circuit

• Latch type shut-down operation (Need 0 voltage recovery)

Outline

RENESAS Package code: PRSS0003AD-A

(Package name: TO-220FM)

D

123

G

Gate resistor

Tempe-

rature

Sensing

Circuit

Latch

Circuit

Gate

Shut-

down

Circuit

S

1. Gate

2. Drain

3. Source

Rev.3.00 Sep 07, 2005 page 1 of 8

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