HAL11X Просмотр технического описания (PDF) - Micronas

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HAL11X

Hall Effect Sensor Family

Micronas 

HAL11x

1.4. Operating Junction Temperature Range

The Hall sensors from Micronas are specified to the chip

temperature (junction temperature TJ).

K: TJ = –40 °C to +140 °C

E: TJ = –40 °C to +100 °C

C: TJ = 0 °C to +100 °C

The relationship between ambient temperature (TA) and

junction temperature is explained in section 5.2. on page

14.

1.5. Hall Sensor Package Codes

HAL XXXPA-T

Temperature Range: K, E, or C

Package: SF for SOT-89B

UA for TO-92UA

(SO for SOT-89A)

Type: 11x

Example: HAL114UA-E

→ Type: 114

→ Package: TO-92UA

→ Temperature Range: TJ = –40 °C to +100 °C

Hall sensors are available in a wide variety of packaging

versions and quantities. For more detailed information,

please refer to the brochure: “Ordering Codes for Hall

Sensors”.

1.6. Solderability

all packages: according to IEC68-2-58

During soldering reflow processing and manual

reworking, a component body temperature of 260 °C

should not be exceeded.

Components stored in the original packaging should

provide a shelf life of at least 12 months, starting from the

date code printed on the labels, even in environments as

extreme as 40 °C and 90% relative humidity.

1VDD

OUT

3

2. Functional Description

The HAL 11x sensors are monolithic integrated circuits

which switch in response to magnetic fields. If a

magnetic field with flux lines perpendicular to the

sensitive area is applied to the sensor, the biased Hall

plate forces a Hall voltage proportional to this field. The

Hall voltage is compared with the actual threshold level

in the comparator. The temperature-dependent bias

increases the supply voltage of the Hall plates and

adjusts the switching points to the decreasing induction

of magnets at higher temperatures. If the magnetic field

exceeds the threshold levels, the open drain output

switches to the appropriate state. The built-in hysteresis

eliminates oscillation and provides switching behavior of

output without bouncing.

Shunt protection devices clamp voltage peaks at the

Output-pin and VDD-pin together with external series

resistors. Reverse current is limited at the VDD-pin by an

internal series resistor up to –15 V. No external reverse

protection diode is needed at the VDD-pin for reverse

voltages ranging from 0 V to –15 V.

VDD

1

Reverse

Voltage &

Overvoltage

Protection

HAL 11x

Temperature

Dependent

Bias

Hysteresis

Control

Short Circuit &

Overvoltage

Protection

GND

2

Hall Plate

Comparator

Output

OUT

3

Fig. 2–1: HAL11x block diagram

2

GND

Fig. 1–1: Pin configuration

4

Micronas

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