HAF2011 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HAF2011

Silicon N Channel MOS FET Series Power Switching

Hitachi -> Renesas Electronics 

HAF2011(L),HAF2011(S)

Silicon N Channel MOS FET Series

Power Switching

Target specification

ADE-208-738 (Z)

1st. Edition

Jan. 1999

Features

This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has

the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down

the gate voltage in case of high junction temperature like applying over power consumption, over current

etc.

• Logic level operation (4 to 6 V Gate drive)

• High endurance capability against to the short circuit

• Built–in the over temperature shut–down circuit

• Latch type shut–down operation (Need 0 voltage recovery)

Outline

LDPAK

D

G

Gate resistor

Tempe–

rature

Sencing

Circuit

Latch

Circuit

Gate

Shut–

down

Circuit

S

4

4

1

2

3

1

2

3

1. Gate

2. Drain

3. Source

4. Drain

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