H926 Просмотр технического описания (PDF) - Shantou Huashan Electronic Devices

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Компоненты Описание

производитель

H926

PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices 

Shantou Huashan Electronic Devices Co.,Ltd.

PNP S I L I C O N T R A N S I S T O R

H926

█ POWER SUPPLIES，RELAY DRIVERS，

LAMP DRIVERS，ELECTRICAL EQUIPMENT

█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）

Tstg——Storage Temperature………………………… -55~150℃

Tj——Junction Temperature…………………………………150℃

PC——Collector Dissipation…………………………………750mW

VCBO——Collector-Base Voltage………………………………-30V

VCEO——Collector-Emitter Voltage……………………………-25V

VEBO——Emitter-Base Voltage………………………………-6V

IC——Collector Current……………………………………-2A

TO-92

1―Emitter，E

2―Collector，C

3―Base，B

█ ELECTRICAL CHARACTERISTICS（Ta=25℃）

Symbol

Characteristics

BVCBO Collector-Base Breakdown Voltage

BVCEO Collector-Emitter Breakdown Voltage

BVEBO Emitter-Base Breakdown Voltage

HFE(1) DC Current Gain

HFE(2)

VCE(sat) Collector- Emitter Saturation Voltage

VBE(sat) Base-Emitter Saturation Voltage

ICBO Collector Cut-off Current

IEBO Emitter Cut-off Current

fT

Current Gain-Bandwidth Product

Cob Output Capacitance

* pulse

█ hFE Classification

Min Typ Max Unit

Test Conditions

-30

V IC=-10μA, IE=0

-25

V IC=-1mA, IB=0

-6

V IE=-10μA，IC=0

100

560

VCE=-2V, IC=-100mA

65 130

VCE=-2V, IC=-1.5A *

-0.35 -0.6 V IC=-1.5A, IB=-75mA *

-0.85 -1.2 V IC=-1.5A, IB=-75mA *

-100 nA VCB=-20V, IE=0

-100 nA VEB=-4V, IC=0

150

MHz VCE=-10V, IC=-50mA

32

pF VCB=-10V, IE=0，f=1MHz

R

100—200

S

140—280

T

200—400

U

280—560

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