H7P1002DL Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталоге

Компоненты Описание

производитель

H7P1002DL

Silicon P Channel MOS FET High Speed Power Switching

Renesas Electronics 

H7P1002DL, H7P1002DS

Electrical Characteristics

Item

Drain to source breakdown

voltage

Gate to source breakdown voltage

Gate to source leak current

Zero gate voltage drain current

Gate to source cutoff voltage

Static drain to source on state

resistance

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Total gate charge

Gate to source charge

Gate to drain charge

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Body-drain diode forward voltage

Body-drain diode reverse recovery

time

Note: 4. Pulse test

Symbol

V(BR)DSS

V(BR)GSS

IGSS

IDSS

VGS(off)

RDS(on)

|yfs|

Ciss

Coss

Crss

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

VDF

trr

Min

–100

±20

—

—

–1.0

—

—

7.2

—

—

—

—

—

—

—

—

—

—

—

—

Typ

—

—

—

—

—

85

105

12

2600

190

120

45

6.5

9.0

23

45

80

13

–0.91

50

Max

—

—

±10

–10

–2.5

105

150

—

—

—

—

—

—

—

—

—

—

—

—

—

(Ta = 25°C)

Unit

Test Conditions

V

ID = –10 mA, VGS = 0

V

IG = ±100 µA, VDS = 0

µA

VGS = ±16 V, VDS = 0

µA VDS = –100 V, VGS = 0

V

ID = –1 mA, VDS = –10 V Note4

mΩ

ID = –7.5 A, VGS = –10 V Note4

mΩ

ID = –7.5 A, VGS = –4.5 V Note4

S

ID = –7.5 A, VDS = –10 V Note4

pF VDS = –10 V

pF

VGS = 0

pF f = 1 MHz

nC VDD = –50 V

nC VGS = –10 V

nC ID = –15 A

ns VGS = –10 V, ID = –7.5 A

ns RL = 4.0 Ω

ns Rg = 4.7 Ω

ns

V

IF = –15 A, VGS = 0

ns

IF = –15 A, VGS = 0

diF/dt = 100 A/µs

REJ03G1601-0100 Rev.1.00 Nov 16, 2007

Page 2 of 8

Share Link: