H7N0308AB Просмотр технического описания (PDF) - Renesas Electronics
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H7N0308AB Datasheet PDF : 7 Pages
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H7N0308AB
Main Characteristics
Power vs. Temperature Derating
160
120
80
40
0
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
100
10 V
Pulse Test
80
4.5 V
3.5 V
60
3V
40
20
VGS = 2.5 V
0
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
500
Pulse Test
400
300
200
ID = 50 A
100
20 A
0
10 A
0
4
8
12 16 20
Gate to Source Voltage VGS (V)
Rev.4.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
500
100
10
1
DC Operation
Operation in
1 ms 100
PW
= 10 ms
µs
10
µs
this area is
limited by RDS (on)
0.1
Tc = 25°C
1 shot Pulse
0.01
0.1 0.3 1 3 10 30 100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
100
VDS = 10 V
Pulse Test
80
60
40
25°C
Tc = 75°C
–25°C
20
0
0
1
2
3
4
5
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
30
10
VGS = 4.5 V
3
10 V
1
0.3
0.1
1
3 10 30 100 300 1000
Drain Current ID (A)
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