H7N0310LD Просмотр технического описания (PDF) - Renesas Electronics
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H7N0310LD Datasheet PDF : 8 Pages
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H7N0310LD, H7N0310LS, H7N0310LM
Static Drain to Source on State Resistance
vs. Temperature
40
Pulse Test
32
24
ID = 20 A
ID = 5 A, 10 A
16 VGS = 5 V
8
10 V
5 A, 10 A, 20 A
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
Body to Drain Diode Reverse
Recovery Time
1000
di / dt = 50 A / µs
500 VGS = 0, Ta = 25°C
200
100
50
20
10
0.1 0.3 1 3 10 30 100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
50
ID = 30 A
40
30 VDS
VDD = 25 V
10 V
5V
20
VGS
16
12
20
8
10
VDD = 25 V
4
10 V
5V
0
0
0
8
16 24 32 40
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
100
30
Tc = –25°C
10
75°C
25°C
3
1
0.3
VDS = 10 V
Pulse Test
0.1
0.1 0.3 1 3 10 30 100
Drain Current ID (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
300
100
Ciss
Coss
Crss
30
VGS = 0
f = 1 MHz
10
0
10 20 30 40 50
Drain to Source Voltage VDS (V)
Switching Characteristics
500
200
tr
100
td(off)
50
td(on)
20
tf
10
VGS = 10 V, VDS = 10 V
Rg = 4.7 Ω, duty ≤ 1 %
5
0.1 0.2 0.5 1 2 5 10 20 50 100
Drain Current ID (A)
Rev.5.00 Apr 07, 2006 page 4 of 7
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