H5N2004DL Просмотр технического описания (PDF) - Renesas Electronics
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производитель
H5N2004DL Datasheet PDF : 8 Pages
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H5N2004DL, H5N2004DS
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
0
50
100
150 200
Case Temperature Tc (°C)
Typical Output Characteristics
10
10 V
8V
8
6.5 V
Pulse Test
6V
6
4
5.5 V
2
VGS = 5 V
0
0
4
8
12 16 20
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
10
Pulse Test
8
6
4
ID = 8 A
2
5A
2A
0
0
4
8
12 16 20
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 7
Maximum Safe Operation Area
100
30
10
3
1
0.3
OperaDtiCoOnpeinPraWtio=n1(0T1mcms=s(215sh°1Co0t))0
10
µs
µs
0.1 this area is
limited by RDS(on)
0.03
Ta = 25°C
0.01
1 3 10 30 100 300
1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
10
VDS = 10 V
Pulse Test
8
6
4
25°C
Tc = 75°C
2
–25°C
0
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
2
Pulse Test
1
0.5
VGS = 10 V, 15 V
0.2
0.1
0.2
0.5 1 2
5 10 20
Drain Current ID (A)
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