H5N2001LM Просмотр технического описания (PDF) - Renesas Electronics
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H5N2001LM Datasheet PDF : 8 Pages
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H5N2001LD, H5N2001LS, H5N2001LM
Static Drain to Source on State Resistance
vs. Temperature
0.5
Pulse Test
VGS = 10 V
0.4
0.3
10 A
ID = 20 A
0.2
0.1
5A
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
1000
500
Body to Drain Diode Reverse
Recovery Time
200
100
50
20
10
5
2
1
0.1 0.3 1
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
3 10 30 100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
400
ID = 20 A
16
VGS
300
200 VDS
12
VDD = 160 V
100 V
50 V
8
100
0
0
VDD = 160 V
4
100 V
50 V
0
20 40 60 80 100
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
100
30
Tc = –25°C
10
3
25°C
1
75°C
0.3
VDS = 10 V
Pulse Test
0.1
0.1 0.3 1 3 10 30 100
Drain Current ID (A)
Typical Capacitance vs.
Drain to Source Voltage
100000
30000
10000
VGS = 0
f = 1 MHz
3000
Ciss
1000
300
100
30
10
0
Coss
Crss
50
100
150
Drain to Source Voltage VDS (V)
Switching Characteristics
10000
3000
VGS = 10 V, VDD = 100 V
RW = 5 µs, duty ≤ 1 %
Rg = 10 Ω
1000
300 tf
100
td(on)
30
tr
10
0.1 0.3
td(off)
13
tr
tf
10 30 100
Drain Current ID (A)
Rev.6.00 Jul 14, 2006 page 4 of 7
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