H5N2001LD Просмотр технического описания (PDF) - Renesas Electronics
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производитель
H5N2001LD Datasheet PDF : 8 Pages
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H5N2001LD, H5N2001LS, H5N2001LM
Main Characteristics
Power vs. Temperature Derating
100
75
50
25
0
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
50
Pulse Test 10 V
40
8V
7V
30
6V
20
10
VGS = 5 V
0
0
4
8
12 16 20
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
4
Pulse Test
3
ID = 20 A
2
10 A
1
5A
0
0
4
8
12 16 20
Gate to Source Voltage VGS (V)
Rev.6.00 Jul 14, 2006 page 3 of 7
Maximum Safe Operation Area
1000
300
100
30
10
3
1
PW =
Operation in
10
1 ms 1001µ0sµs
ms (1shot)
this area is
0.3 limited by RDS (on)
0.1
DC Operation
0.03
Ta = 25°C
0.01
Tc = 25°C
1 3 10 30 100 300
1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
50
VDS = 10 V
Pulse Test
40
30
20
Tc = 75°C
10
25°C
–25°C
0
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5 VGS = 10 V
0.2
0.1
0.05
0.02
0.01
1
3 10 30 100 300 1000
Drain Current ID (A)
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