H5N2001LD Просмотр технического описания (PDF) - Renesas Electronics
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H5N2001LD Datasheet PDF : 8 Pages
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H5N2001LD, H5N2001LS, H5N2001LM
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Body to drain diode reverse drain peak current
Avalanche current
Channel dissipation
Channel to case Thermal Impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Tch ≤ 150°C
Symbol
VDSS
VGSS
ID
ID (pulse) Note 1
IDR
IDR (pulse) Note 1
IAP Note 3
Pch Note 2
θ ch-c
Tch
Tstg
Ratings
200
±30
20
80
20
80
20
75
1.67
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body to drain diode forward voltage
Body to drain diode reverse recovery time
Body to drain diode reverse recovery
charge
Note: 4. Pulse test
Symbol
V (BR) DSS
IGSS
IDSS
VGS (off)
RDS (on)
|yfs|
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
VDF
trr
Qrr
(Ta = 25°C)
Min Typ Max Unit
Test Conditions
200
—
—
—
— ±0.1
—
—
1
3.0
—
4.5
— 0.100 0.125
8
14
—
— 1350 —
—
180
—
—
55
—
V ID = 10 mA, VGS = 0
µA VGS = ±30 V, VDS = 0
µA VDS = 200 V, VGS = 0
V ID = 1 mA, VDS = 10 V
Ω
ID = 10 A, VGS = 10 V Note 4
S
ID = 10 A, VDS = 10 V Note 4
pF VDS = 25 V
pF VGS = 0
pF f = 1 MHz
—
35
—
ns ID = 10 A
—
70
—
ns RL = 10 Ω
—
85
—
ns VGS = 10 V
—
20
—
ns Rg = 10 Ω
—
44
—
nC VDD = 160 V
—
8
—
nC VGS = 10 V
—
22
—
nC ID = 20 A
—
0.9 1.4
V
IF = 20 A, VGS = 0 Note4
—
140
—
ns IF = 20 A, VGS = 0
—
0.7
—
µC diF/dt = 100 A/µs
Rev.6.00 Jul 14, 2006 page 2 of 7
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