H5N2007FN Просмотр технического описания (PDF) - Renesas Electronics
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H5N2007FN Datasheet PDF : 8 Pages
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H5N2007FN
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
100
10 V
Pulse Test
8V
80
7V
60
6V
40
20
VGS = 5 V
0
4
8
12 16 20
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
5
Pulse Test
4
3
2
I D = 45 A
1
22.5 A
12.5 A
0
4
8
12 16 20
Gate to Source Voltage VGS (V)
1000
Maximum Safe Operation Area
300
100
30
10
3
1
0.3
Operation
DC
in
OPpWera=tio1n0(mT1cs=m(112ss50h°0Co)µt1)s0
µs
this area is
0.1 limited by RDS(on)
0.03
Ta = 25°C
0.01
0.1 0.3 1 3
10 30 100 300 1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
100
VDS = 10 V
Pulse Test
80
60
40
20
Tc = 75°C
25°C
–25°C
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
0.2
Pulse Test
VGS = 10 V
0.1
0.05
0.02
0.01
1
2
5 10 20 50 100
Drain Current ID (A)
Rev.1.00, May.28.2004, page 3 of 7
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