H5N2008P Просмотр технического описания (PDF) - Renesas Electronics
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H5N2008P Datasheet PDF : 7 Pages
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H5N2008P
Static Drain to Source on State Resistance
vs. Temperature
0.1
VGS = 10 V
Pulse Test
0.08
0.06
ID = 96 A
48 A
0.04
20 A
0.02
0
−25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
1000
500
Body-Drain Diode Reverse
Recovery Time
200
100
50
20
10
5
2
1
0.1 0.3
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
1 3 10 30 100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
400
16
ID = 96 A
VGS
VDD = 50 V
300
100 V
12
160 V
200
8
VDS
100
4
VDD = 160 V
100 V
50 V
0
0
40 80 120 160 200
Gate Charge Qg (nC)
1000
Forward Transfer Admittance vs.
Drain Current
300
Tc = −25°C
100
30
25°C
10
75°C
3
1
1
100000
30000
10000
3000
1000
300
100
VDS = 10 V
Pulse Test
3 10 30 100 300 1000
Drain Current ID (A)
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
30
10
0
50
100
150
Drain to Source Voltage VDS (V)
10000
Switching Characteristics
VGS = 10 V, VDD = 100 V
PW = 5 µs, duty < 1 %
Rg = 10 Ω
1000 tf
tr
td(off)
100
tf
td(on)
tr
10
0.1 0.3 1 3 10 30 100
Drain Current ID (A)
Rev.3.00 Nov.24.2004 page 4 of 6
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