MOC8204SM Просмотр технического описания (PDF) - Fairchild Semiconductor

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MOC8204SM

High Voltage Phototransistor Optocouplers

Fairchild Semiconductor 

September 2009

4N38M, H11D1M, H11D2M, H11D3M, MOC8204M

High Voltage Phototransistor Optocouplers

Features

■ High voltage:

– MOC8204M, BVCER = 400V

– H11D1M, H11D2M, BVCER = 300V

– H11D3M, BVCER = 200V

■ High isolation voltage:

– 7500 VAC peak, 1 second

■ Underwriters Laboratory (UL) recognized

File # E90700, Volume 2

■ IEC 60747-5-2 approved (ordering option V)

Applications

■ Power supply regulators

■ Digital logic inputs

■ Microprocessor inputs

■ Appliance sensor systems

■ Industrial controls

General Description

The 4N38M, H11DXM and MOC8204M are photo-

transistor-type optically coupled optoisolators. A gallium

arsenide infrared emitting diode is coupled with a high

voltage NPN silicon phototransistor. The device is sup-

plied in a standard plastic six-pin dual-in-line package.

Schematic

Package Outlines

ANODE 1

CATHODE 2

N/C 3

6 BASE

5 COLLECTOR

4 EMITTER

©2007 Fairchild Semiconductor Corporation

4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6

www.fairchildsemi.com

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