Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Номер в каталоге
Компоненты Описание
GT30J341 Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
GT30J341
Discrete IGBTs Silicon N-Channel IGBT
Toshiba
GT30J341 Datasheet PDF : 10 Pages
1
2
3
4
5
6
7
8
9
10
Discrete IGBTs Silicon N-Channel IGBT
GT30J341
1. Applications
• Motor Drivers
2. Features
(1) Sixth generation
(2) Low saturation voltage: V
CE(sat)
= 1.5 V (typ.) (I
C
= 30 A)
(3) High junction temperature: T
j
= 175
(max)
(4) FRD included between emitter and collector
3. Packaging and Internal Circuit
GT30J341
TO-3P(N)
1: Gate
2: Collector (Heat sink)
3: Emitter
1
2012-03-29
Rev.1.0
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]