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GT30J341 Просмотр технического описания (PDF) - Toshiba

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Компоненты Описание
производитель
GT30J341 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Discrete IGBTs Silicon N-Channel IGBT
GT30J341
1. Applications
• Motor Drivers
2. Features
(1) Sixth generation
(2) Low saturation voltage: VCE(sat) = 1.5 V (typ.) (IC = 30 A)
(3) High junction temperature: Tj = 175(max)
(4) FRD included between emitter and collector
3. Packaging and Internal Circuit
GT30J341
TO-3P(N)
1: Gate
2: Collector (Heat sink)
3: Emitter
1
2012-03-29
Rev.1.0

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