HUF76113T3ST Просмотр технического описания (PDF) - Intersil
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HUF76113T3ST Datasheet PDF : 12 Pages
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HUF76113T3ST
Electrical Specifications TA = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
Turn-On Delay Time
Rise Time
tON
VDD = 15V, ID ≅ 4.7A,
-
td(ON)
RL = 3.2Ω, VGS = 10V,
RGS = 9.1Ω
-
tr
(Figure 16)
-
Turn-Off Delay Time
td(OFF)
-
Fall Time
tf
-
Turn-Off Time
tOFF
-
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
CAPACITANCE SPECIFICATIONS
Qg(TOT) VGS = 0V to 10V VDD = 15V, ID ≅ 2.7A,
-
Qg(5)
VGS = 0V to 5V
RL = 5.5Ω
Ig(REF) = 1.0mA
-
Qg(TH) VGS = 0V to 1V
(Figure 14)
-
Qgs
-
Qgd
-
Input Capacitance
Output Capacitance
CISS
VDS = 25V, VGS = 0V,
-
f = 1MHz
COSS (Figure 13)
-
Reverse Transfer Capacitance
CRSS
-
NOTES:
2. Rated with RθJA=110oC/W measured using FR-4 board with 0.173 in2 copper at 1000 seconds.
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Source to Drain Diode Voltage
VSD
ISD = 4.7A
-
ISD = 2.7A
-
Reverse Recovery Time
trr
ISD = 2.7A, dISD/dt = 100A/µs
-
Reverse Recovered Charge
QRR
ISD = 2.7A, dISD/dt = 100A/µs
-
Typical Performance Curves
TYP
MAX UNITS
-
40
ns
4
-
ns
21
-
ns
31
-
ns
25
-
ns
-
85
ns
17.0
20.5
nC
9.5
11.5
nC
0.73
0.90
nC
1.50
-
nC
4.30
-
nC
625
-
pF
310
-
pF
60
-
pF
TYP
MAX UNITS
-
1.25
V
-
1.00
V
-
44
ns
-
46
nC
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
5
VGS = 10V, RθJA = 110oC/W
4
3
VGS = 4.5V, RθJA = 110oC/W
2
1
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
3
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