76113 Просмотр технического описания (PDF) - Fairchild Semiconductor
Номер в каталоге
Компоненты Описание
производитель
76113 Datasheet PDF : 12 Pages
| |||
HUF76113T3ST
Electrical Specifications TA = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNITS
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
tON
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
Turn-Off Time
tOFF
GATE CHARGE SPECIFICATIONS
VDD = 15V, ID ≅ 4.7A,
RL = 3.2Ω, VGS = 10V,
RGS = 9.1Ω
(Figure 16)
-
-
40
ns
-
4
-
ns
-
21
-
ns
-
31
-
ns
-
25
-
ns
-
-
85
ns
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
CAPACITANCE SPECIFICATIONS
Qg(TOT)
Qg(5)
Qg(TH)
Qgs
Qgd
VGS = 0V to 10V
VGS = 0V to 5V
VGS = 0V to 1V
VDD = 15V, ID ≅
2.7A,
RL = 5.5Ω
Ig(REF) = 1.0mA
(Figure 14)
-
17.0
20.5
nC
-
9.5
11.5
nC
-
0.73
0.90
nC
-
1.50
-
nC
-
4.30
-
nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 13)
-
625
-
pF
-
310
-
pF
-
60
-
pF
NOTES:
2. Rated with RθJA=110oC/W measured using FR-4 board with 0.173 in2 copper at 1000 seconds.
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNITS
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
VSD
trr
QRR
ISD = 4.7A
ISD = 2.7A
ISD = 2.7A, dISD/dt = 100A/µs
ISD = 2.7A, dISD/dt = 100A/µs
-
-
1.25
V
-
-
1.00
V
-
-
44
ns
-
-
46
nC
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
5
VGS = 10V, RθJA = 110oC/W
4
3
VGS = 4.5V, RθJA = 110oC/W
2
1
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
©2003 Fairchild Semiconductor Corporation
HUF76113T3ST Rev. B2
Share Link: 