GS78108AB Просмотр технического описания (PDF) - Giga Semiconductor

Номер в каталоге

Компоненты Описание

производитель

GS78108AB

1M x 8 8Mb Asynchronous SRAM

Giga Semiconductor 

AC Test Conditions

Parameter

Conditions

Input high level

Input low level

Input rise time

VIH = 2.4 V

VIL = 0.4 V

tr = 1 V/ns

Input fall time

tf = 1 V/ns

Input reference level

1.4 V

Output reference level

1.4 V

Output load

Fig. 1& 2

Notes:

1. Include scope and jig capacitance.

2. Test conditions as specified with output loading as shown in Fig. 1

unless otherwise noted

3. Output load 2 for tLZ, tHZ, tOLZ and tOHZ.

GS78108AB

Output Load 1

DQ

50Ω 30pF1

VT = 1.4 V

Output Load 2

3.3 V

DQ

589Ω

5pF1 434Ω

AC Characteristics

Read Cycle

Parameter

Read cycle time

Address access time

Chip enable access time (CE)

Output enable to output valid (OE)

Output hold from address change

Chip enable to output in low Z (CE)

Output enable to output in low Z (OE)

Chip disable to output in High Z (CE)

Output disable to output in High Z (OE)

-8

-10

-12

Symbol

Unit

Min Max Min Max Min Max

tRC

8

—

10

—

12

—

ns

tAA

—

8

—

10

—

12

ns

tAC

—

8

—

10

—

12

ns

tOE

—

3.5

—

4

—

5

ns

tOH

3

—

3

—

3

—

ns

tLZ*

3

—

3

—

3

—

ns

tOLZ*

0

—

0

—

0

—

ns

tHZ*

—

4

—

5

—

6

ns

tOHZ*

—

3.5

—

4

—

5

ns

Rev: 1.04 5/2006

5/11

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

© 2003, GSI Technology

Share Link: