GS8150V18AB Просмотр технического описания (PDF) - Giga Semiconductor

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Компоненты Описание

производитель

GS8150V18AB

1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM

Giga Semiconductor 

Device Under Test

VDDQ = 1.5 V

DQ

25Ω

ZQ

RQ = 250Ω

Product Preview

GS8150V18/36AB-357/333/300/250

AC Test Load Diagram

50Ω

50Ω

5pF

VDDQ/2

VDDQ/2

50Ω

50Ω

5pF

VDDQ/2

Input and Output Leakage Characteristics

Parameter

Input Leakage Current

(except mode pins)

ZQ, MCH, MCL, EP2, EP3

Pin Input Current

Symbol

IIL

IINM

Output Leakage Current

IOL

Test Conditions

VIN = 0 to VDDQ

VIN = 0 to VDDQ

Output Disable,

VOUT = 0 to VDDQ

Min.

–2 uA

–50 uA

–2 uA

Max Notes

2 uA

—

50 uA

—

2 uA

—

Operating Currents

Parameter

Symbol

x36

IDD

Operating

Current

x18

IDD

HSTL

Deselect

IDD3

Current

-357

0°C –40°C

to

to

70°C +85°C

650 mA 660 mA

600 mA 610 mA

150 mA 160 mA

-333

0°C –40°C

to

to

70°C +85°C

600 mA 610 mA

550 mA 560 mA

150 mA 160 mA

-300

0°C –40°C

to

to

70°C +85°C

550 mA 560 mA

500 mA 510 mA

150 mA 160 mA

-250

0°C –40°C

to

to

70°C +85°C

500 mA 510 mA

450 mA 460 mA

150 mA 160 mA

Test Conditions

SS ≤ VIL Max.

tKHKH ≥ tKHKH Min.

All other inputs

VIL ≥ VIN ≥ VIH

Device Deselected

All inputs

VSS + 0.10 V

≥ VIN ≥

VDD – 0.10 V

Rev: 1.04 4/2005

11/25

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

© 2003, GSI Technology

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