GS74108J Просмотр технического описания (PDF) - Giga Semiconductor

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Компоненты Описание

производитель

GS74108J

512K x 8 4Mb Asynchronous SRAM

Giga Semiconductor 

GS74108TP/J

Power Supply Currents

Parameter Symbol Test Conditions

0 to 70°C

-40 to 85°C

8ns 10ns 12ns 15ns 10ns 12ns 15ns

Operating

Supply

IDD

Current

CE ≤ VIL

All other inputs

≥ VIH or ≤ VIL

Min. cycle time

IOUT = 0 mA

150mA 125mA 110mA 90mA 135mA 120mA 100mA

CE ≥ VIH

Standby

Current

ISB1

All other inputs

≥ VIH or ≤VIL

70mA 65mA 60mA 55mA 75mA 70mA 65mA

Min. cycle time

Standby

Current

CE ≥ VDD - 0.2V

ISB2

All other inputs

≥ VDD - 0.2V or ≤ 0.2V

30mA

40mA

AC Test Conditions

Parameter

Conditions

Input high level

Input low level

Input rise time

Input fall time

VIH=2.4V

VIL=0.4V

tr=1V/ns

tf=1V/ns

Input reference level

1.4V

Output reference level

1.4V

Output load

Fig. 1& 2

Note:

1. Include scope and jig capacitance.

2. Test conditions as specified with output loading as shown in Fig. 1

unless otherwise noted

3. Output load 2 for tLZ, tHZ, tOLZ and tOHZ.

Output Load 1

DQ

50Ω 30pF1

VT=1.4V

Output Load 2

3.3V

DQ

589Ω

5pF1 434Ω

Rev: 1.06 7/2000

5/12

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

© 1999, Giga Semiconductor, Inc.

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