GS3018K Просмотр технического описания (PDF) - GTM CORPORATION

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GS3018K

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM CORPORATION 

ISSUED DATE :2005/04/27

REVISED DATE :2005/07/12B

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

Fig 11. Transfer Characteristics

Fig 12. Gate Charge Waveform

Important Notice:

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.

GTM reserves the right to make changes to its products without notice.

GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.

GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

Head Office And Factory:

Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.

TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785

China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China

TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165

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