GP2L24CJ000F Просмотр технического описания (PDF) - Sharp Electronics
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GP2L24CJ000F Datasheet PDF : 12 Pages
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GP2L24J0000F
■ Design Considerations
● Design guide
1) Prevention of detection error
To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to
the external light.
2) Distance characteristic
Please refer to Fig.11 (Relative collector current vs. Distance) to set the distance of the photointerrupter
and the object.
This product is not designed against irradiation and incorporates non-coherent IRED.
● Degradation
In general, the emission of the IRED used in photointerrupter will degrade over time.
In the case of long term operation, please take the general IRED degradation (50% degradation over 5
years) into the design consideration.
● Parts
This product is assembled using the below parts.
• Photodetector (qty. : 1)
Category
Material
Phototransister
Silicon (Si)
Maximum Sensitivity
wavelength (nm)
800
Sensitivity
wavelength (nm)
700 to 1 200
• Photo emitter (qty. : 1)
Category
Infrared emitting diode
(non-coherent)
Material
Gallium arsenide (GaAs)
• Material
Case
Black polyphenylene
Lead frame
42Alloy
Maximum light emitting
wavelength (nm)
950
Lead frame plating
SnCu plating
Response time (μs)
80
I/O Frequency (MHz)
0.3
Sheet No.: D3-A02301EN
9
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