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GM76C256CLT Просмотр технического описания (PDF) - Hynix Semiconductor

Номер в каталоге
Компоненты Описание
производитель
GM76C256CLT
Hynix
Hynix Semiconductor Hynix
GM76C256CLT Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
GM76C256C Series
DC CHARACTERISTICS
Vcc = 5V ±10%, TA = 0°C to 70°C (Normal)/-25°C to 85°C (Extended), unless otherwise specified.
Symbol
Parameter
Test Condition
Min. Typ. Max.
ILI
Input Leakage Current
Vss < VIN < Vcc
-1
-
1
ILO
Output Leakage Current
Vss < VOUT < Vcc, /CS = VIH or
-1
-
1
/OE = VIH or /WE = VIL
Icc
Operating Power Supply
/CS = VIL, VIN = VIH or VIL,
-
-
10
Current
VIN = VIH or VIL, II/O = 0mA
ICC1
Average Operating Current /CS = VIL, VIN = VIH or VIL,
-
-
70
Min. Duty Cycle = 100%, II/O = 0mA
ISB
TTL Standby Current
/CS= VIH
-
-
1
(TTL Inputs)
VIN = VIH or VIL
ISB1
CMOS Standby Current
/CS > Vcc - 0.2V,
L
-
-
40
(CMOS Inputs)
VIN > Vcc - 0.2V or
LL
-
-
20
VIN < Vss + 0.2V
LE
-
-
60
LLE
-
-
30
VOL
Output Low Voltage
IOL = 2.1mA
-
-
0.4
VOH
Output High Voltage
IOH = -1.0mA
2.4
-
-
Unit
uA
uA
mA
mA
mA
uA
uA
uA
uA
V
V
Note : Typical values are at Vcc =5.0V, TA = 25°C
AC CHARACTERISTICS(I)
Vcc = 5V ±10%, TA = 0°C to 70°C (Normal) / -25°C to 85°C (Extended) unless otherwise specified.
# Symbol
Parameter
-55
Min. Max.
-70
Min. Max.
-85
Min Max.
Unit
READ CYCLE
1 tRC Read Cycle Time
55
-
70
-
85
- ns
2 tAA
Address Access Time
-
55
-
70
-
85 ns
3 tACS Chip Select Access Time
-
55
-
70
-
85 ns
4 tOE Output Enable to Output Valid
-
30
-
35
-
45 ns
5 tCLZ Chip Select to Output in Low Z
10
-
10
-
10
- ns
6 tOLZ Output Enable to Output in Low Z
5
-
5
-
5
- ns
7 tCHZ Chip Disable to Output in High Z
0
20
0
30
0
30 ns
8 tOHZ Out Disable to Output in High Z
0
20
0
30
0
30 ns
9 tOH Output Hold from Address Change
5
-
5
-
5
- ns
WRITE CYCLE
10 tWC Write Cycle Time
55
-
70
-
85
- ns
11 tCW Chip Selection to End of Write
50
-
65
-
75
- ns
12 tAW Address Valid to End of Write
50
-
65
-
75
- ns
13 tAS
Address Set-up Time
0
-
0
-
0
- ns
14 tWP Write Pulse Width
40
-
50
-
60
- ns
15 tWR Write Recovery Time
0
-
0
-
0
- ns
16 tWHZ Write to Output in High Z
0
20
0
25
0
30 ns
17 tDW Data to Write Time Overlap
25
-
30
-
40
- ns
18 tDH Data Hold from Write Time
0
-
0
-
0
- ns
19 tOW Output Active from End of Write
5
-
5
-
5
- ns
Rev 03 / Apr. 2000
3

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