G9494-512D Просмотр технического описания (PDF) - Hamamatsu Photonics
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производитель
G9494-512D Datasheet PDF : 5 Pages
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InGaAs linear image sensor G9494-256D/-512D
s Noise vs. temperature
(Typ. Vdd=5 V, INP=3.5 V, Vref=1.26 V, Cf=0.1 pF, Integration time 200 µs, Number of integrations 50)
2.0
1.5
s Dark current vs. temperature
100 pA
(Typ.)
G9494-256D
10 pA
1.0
1 pA
G9494-512D
0.5
100 fA
0
-20 -10 0 10 20 30 40 50 60 70
TEMPERATURE (˚C)
KMIRB0036EA
s Dimensional outlines (unit: mm)
10 fA
-20 -10 0 10 20 30 40 50 60 70
TEMPERATURE (˚C)
KMIRB0035EA
G9494-256D
22 21
31.75 ± 0.3
CMOS AMP
13 12
3.0 ± 0.3
0.75 ± 0.08
1.3 ± 0.15
INDEX MARK
12
ACTIVE AREA
10 11
AR COATED
BOROSILICATE GLASS
2.54
25.4 ± 0.15
0.95 ± 0.3
Pin No.
1
2
3
4
5
6
7
8
9
10
11
Pin connection
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
Pin No.
12
13
14
15
16
17
18
19
20
21
22
Pin connection
VIDEO
Vref
CLK
NC
INP
Vss
Vdd
NC
AD-TRIG
RESET
Cf-SELECT
KMIRA0015EB
4
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