33C408RTFS30 Просмотр технического описания (PDF) - MAXWELL TECHNOLOGIES
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33C408RTFS30 Datasheet PDF : 12 Pages
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4 Megabit (512K x 8-Bit) CMOS SRAM
33C408
PARAMETER
TABLE 9. 33C408 AC CHARACTERISTICS FOR WRITE CYCLE
(VCC = 5V + 10%, TA = -55 TO +125 °C, UNLESS OTHERWISE SPECIFIED)
SUBGROUPS
SYMBOL
MIN
TYP
MAX
UNIT
Write Pulse Width (OE High)
-20
-25
-30
Write Recovery Time
-20
-25
-30
Write to Output in High-Z
-20
-25
-30
9, 10, 11
tWP
14
--
15
--
17
--
ns
--
--
--
9, 10, 11
tWR
ns
0
--
--
0
--
--
0
--
--
9, 10, 11
tWHZ
ns
--
5
--
--
5
--
--
6
--
Write Pulse Width (OE Low)
-20
-25
-30
Data to Write Time Overlap
-20
-25
-30
End Write to Output Low-Z
-20
-25
-30
9, 10, 11
tWP1
ns
--
20
--
--
25
--
--
30
--
9, 10, 11
tDW
9
--
10
--
11
--
ns
--
--
--
9, 10, 11
tOW
ns
--
6
--
--
7
--
--
8
--
Data Hold from Write Time
-20
-25
-30
9, 10, 11
tDH
ns
0
--
--
0
--
--
0
--
--
04.16.02 REV 8
All data sheets are subject to change without notice 6
©2002 Maxwell Technologies
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