FTD2017C Просмотр технического описания (PDF) - SANYO -> Panasonic

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Компоненты Описание

производитель

FTD2017C

N-Channel Silicon MOSFET

SANYO -> Panasonic 

Electrical Characteristics at Ta=25°C

FTD2017C

Parameter

Symbol

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

V(BR)DSS

IDSS

IGSS

VGS(off)

| yfs |

RDS(on)1

RDS(on)2

RDS(on)3

RDS(on)4

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

Conditions

ID=1mA, VGS=0V

VDS=20V, VGS=0V

VGS=±8V, VDS=0V

VDS=10V, ID=1mA

VDS=10V, ID=6A

ID=6A, VGS=4.5V

ID=6A, VGS=4V

ID=3A, VGS=3.1V

ID=3A, VGS=2.5V

See specified Test Circuit.

See specified Test Circuit.

See specified Test Circuit.

See specified Test Circuit.

VDS=10V, VGS=4.5V, ID=6A

VDS=10V, VGS=4.5V, ID=6A

VDS=10V, VGS=4.5V, ID=6A

IS=6A, VGS=0V

Switching Time Test Circuit

VIN

4.5V

0V

VIN

PW=10μs

D.C.≤1%

G

VDD=10V

ID=5A

RL=2Ω

D

VOUT

Rg

FTD2017C

P.G

50Ω

S

Rg=2.1kΩ

Ratings

Unit

min

typ

max

20

V

1

μA

±10

μA

0.5

1.3

V

7.5

S

13

17

23 mΩ

14

18

24 mΩ

15

19

30 mΩ

15.4

20

33 mΩ

620

ns

1160

ns

3660

ns

2010

ns

6.2

nC

1.7

nC

1.3

nC

0.79

1.2

V

ID -- VDS

10

9

8

7

6

5

4

VGS=1.5V

3

2

1

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Drain-to-Source Voltage, VDS -- V IT16339

10 VDS=10V

9

ID -- VGS

8

7

6

5

4

3

2

1

0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

Gate-to-Source Voltage, VGS -- V IT16340

No. A1930-2/4

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