FTD2017C Просмотр технического описания (PDF) - SANYO -> Panasonic

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Компоненты Описание

производитель

FTD2017C

N-Channel Silicon MOSFET

SANYO -> Panasonic 

Ordering number : ENA1930

FTD2017C

SANYO Semiconductors

DATA SHEET

FTD2017C

Features

• Low ON-resistance

• Mount heigt 1.1mm

• Drain common specifications

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

• 2.5V drive

• Composite type, facilitating high-density mounting

• Halogen free compliance

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Total Dissipation

Channel Temperature

Storage Temperature

Symbol

VDSS

VGSS

ID

IDP

PD

PT

Tch

Tstg

Conditions

PW≤10μs, duty cycle≤1%

When mounted on ceramic substrate (1000mm2×0.8mm) 1unit

When mounted on ceramic substrate (1000mm2×0.8mm)

Ratings

Unit

20

V

±12

V

6

A

40

A

1.35

W

1.4

W

150

°C

--55 to +150

°C

Package Dimensions

unit : mm (typ)

7006A-005

3.0

8

5

0.125

1

4

0.25

0.65

1 : Drain

2 : Source1

3 : Source1

4 : Gate1

5 : Gate2

6 : Source2

7 : Source2

8 : Drain

SANYO : TSSOP8

Product & Package Information

• Package

: TSSOP8

• JEITA, JEDEC

:-

• Minimum Packing Quantity : 3,000 pcs./reel

Packing Type : TL

Marking

LOT No.

D2017C

TL

Electrical Connection

8765

12 3 4

http://semicon.sanyo.com/en/network

30211PA TKIM TC-00002574 No. A1930-1/4

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