FSJ9160D Просмотр технического описания (PDF) - Intersil
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FSJ9160D Datasheet PDF : 8 Pages
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FSJ9160D, FSJ9160R
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
Forward Voltage
Reverse Recovery Time
VSD
ISD = 44A
trr
ISD = 44A, dISD/dt = 100A/µs
-0.6
-
-1.8
-
-
230
Electrical Specifications up to 100K RAD TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate to Body Leakage
Zero Gate Leakage
Drain to Source On-State Volts
Drain to Source On Resistance
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
(Note 3)
(Note 3)
(Notes 2, 3)
(Note 3)
(Notes 1, 3)
(Notes 1, 3)
BVDSS
VGS(TH)
IGSS
IDSS
VDS(ON)
rDS(ON)12
VGS = 0, ID = 1mA
VGS = VDS, ID = 1mA
VGS = ±20V, VDS = 0V
VGS = 0, VDS = -80V
VGS = -12V, ID = 44A
VGS = -12V, ID = 28A
-100
-2.0
-
-
-
-
3. In Situ Gamma bias must be sampled for both VGS = -12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS.
Single Event Effects (SEB, SEGR) (Note 4)
MAX
-
-6.0
100
25
-2.66
0.055
TEST
SYMBOL
ENVIRONMENT (NOTE 5)
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (µ)
APPLIED
VGS BIAS
(V)
Single Event Effects Safe Operating
SEESOA
Ni
26
43
20
Area
Br
37
36
10
Br
37
36
15
Br
37
36
20
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm2 (Typ), T = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
UNITS
V
ns
UNITS
V
V
nA
µA
V
Ω
(NOTE 6)
MAXIMUM
VDS BIAS
(V)
-100
-100
-80
-50
Typical Performance Curves Unless Otherwise Specified
-120
-100
LET = 26MeV/mg/cm2, RANGE = 43µ
LET = 37MeV/mg/cm2, RANGE = 36µ
FLUENCE = 1E5 IONS/cm2 (TYPICAL)
-80
-60
-40
-20
TEMP = 25oC
0
0
5
10
15
20
25
VGS (V)
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
1E-3
1E-4
1E-5
1E-6
ILM = 10A
30A
100A
300A
1E-7
-10
-30
-100
-300
DRAIN SUPPLY (V)
-1000
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO IAS
3-229
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