FQPF7N65CYDTU Просмотр технического описания (PDF) - Fairchild Semiconductor
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FQPF7N65CYDTU Datasheet PDF : 10 Pages
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FQPF7N65C
N-Channel QFET® MOSFET
650 V, 7 A, 1.4 Ω
August 2013
Description
Features
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC),
and electronic lamp ballasts.
• 7 A, 650 V, RDS(on).= 1.4 Ω (Max.) @ VGS = 10 V, ID = 3.5 A
• Low Gate Charge (Typ. 28 nC)
• Low Crss (Typ. 12 pF)
• 100% Avalanche Tested
D
G
GD S
TO-220F
S
TO-220F
Y-formed
D
!
G!
●
◀▲
●
●
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
EAR
Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD
Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
FQPF7N65C / FQPF7N65CYDTU
650
7*
4.2 *
28 *
± 30
212
7
1.6
4.5
52
0.42
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQPF7N65C / FQPF7N65CYDTU
2.4
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation
FQPF7N65C Rev. C1
www.fairchildsemi.com
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